Stanford Microdevices' SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
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